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Superconducting quantum circuits (SQC) are one of the most promising hardware platforms for quantum computing, yet their performance is currently limited by the presence of various structural defects inside the circuit's structure. Despite impressive progress in the past decade, a precise understanding of the origin of these defects from various fabrication processes and their impact on coherence is still lacking. Here, in this study, we performed a comprehensive investigation on the microstructure, superconductivity, and resonator quality factor of Nb films deposited by high-power impulse magnetron sputtering (HiPIMS) and direct current (DC) magnetron sputtering. A suite of characterization techniques, including electronmore » microscopy with spectroscopy, secondary ion mass spectrometry, magneto-optical microscopy, and pump-probe reflectivity spectroscopy is used. We reveal that niobium (Nb) resonators fabricated using HiPIMS exhibit a smaller average grain size, thicker surface oxide with larger thickness variations (rougher surface), and a thicker amorphous Nb/Si interface layer compared to samples deposited by DC sputtering. We identified that the amorphous Nb oxides (mainly located at the Nb surface and along the grain boundaries) and Nb-Si amorphous layers (at the Nb/Si interface) are major and potential sources of two-level system (TLS), while off-stochiometric oxides and suboxides of Nb close to the surface, crystalline defects (i.e., dislocations at grain boundary, point defects introduced during deposition) are main contributors of non-TLS sources. Our findings clarify the relationship between different defects and coherence loss mechanisms, highlighting the importance of material microstructure control on performance optimization in SQC.« less

Abstract We present a transmon qubit fabrication technique that yields systematic improvements in T ₁ relaxation times. We encapsulate the surface of niobium and prevent the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, as well as substrates across different qubit foundries demonstrates the detrimental impact that niobium oxides have on coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T ₁ relaxation timesmore » 2–5 times longer than baseline qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 μs, with maximum values up to 600 μs. Our comparative structural and chemical analysis provides insight into why amorphous niobium oxides may induce higher losses compared to other amorphous oxides.« less

Proximity effects in superconducting normal (SN) material heterostructures with metals and semiconductors have long been observed and theoretically described in terms of Cooper pair wave functions and Andreev reflections. Whereas the semiconducting N-layer materials in the proximity experiments to date have been doped and tens of nanometers thick, we present here a proximity tunneling study involving a pristine single-layer transition-metal dichalcogenide film of MoS₂ placed on top of a Pb thin film. Scanning tunneling microscopy and spectroscopy experiments together with parallel theoretical analysis based on electronic structure calculations and Green’s function modeling allow us to unveil a two-step process inmore » which MoS₂ first becomes metallic and then is induced into becoming a conventional s-wave Bardeen–Cooper–Schrieffer-type superconductor. The lattice mismatch between the MoS₂ overlayer and the Pb substrate is found to give rise to a topographic moiré pattern. Even though the induced gap appears uniform in location, the coherence peak height of the tunneling spectra is modulated spatially into a moiré pattern that is similar to but shifted with respect to the moiré pattern observed in topography. The aforementioned modulation is shown to originate from the atomic-scale structure of the SN interface and the nature of local atomic orbitals that are involved in generating the local pairing potential. Our study indicates that the local modulation of induced superconductivity in MoS₂ could be controlled via geometrical tuning, and it thus shows promise toward the integration of monolayer superconductors into next-generation functional electronic devices by exploiting proximity-effect control of quantum phases.« less

Here, we present an analysis of Nb₃Sn surface layers grown on a bulk Nb coupon prepared at the same time and by the same vapor diffusion process used to make Nb₃Sn coatings on 1.3 GHz Nb cavities. Tunneling spectroscopy reveal a well developed, homogeneous superconducting density of states at the surface with a gap value distribution centered around 2.7 ± 0.4 meV and superconducting critical temperature's (T_c) up to 16.3K. Transmission electron microscopy (TEM) performed on cross sections of the sample's surface shows a ~ 2 microns thick Nb₃Sn surface layer. The elemental composition map exhibits a Nb:Sn ratio ofmore » 3:1 with buried substoichiometric regions with a ratio of 5:1. Synchrotron diffraction experiments indicate a polycrystalline Nb₃Sn film and confirm the presence of Nb rich regions that occupies about a third of the coating volume. These low T_c regions could play an important role in the dissipation mechanisms occurring during RF tests of Nb₃Sn -coated Nb cavities and open the way for further improving a very promising alternative to pure Nb cavities for particle accelerators.« less

A tunneling spectroscopy study is presented of superconducting MoN and Nbo.8Tio.2N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV, respectively, with a corresponding critical temperature of 11.5K and 13.4 K, among the highest reported Tc values achieved by the ALD technique.Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below rvl0%) were obtained using an artificial tunnel barrier of Ah03 on the film's surface grown exmore » situ by ALD. We find a large critical current density on the order of 4 x 106Ncm2 at T =0.8Tc for a 60 run MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest that the ALD technique offers significant promise for thin film superconducting device applications.« less